| 发明名称 |
Method of cleaning a surface of a water in connection with forming a barrier layer of a semiconductor device |
| 摘要 |
A method of cleaning a surface of a silicon wafer includes subjecting the surface of the silicon wafer to a hydrogen (H<SUB>2</SUB>) gas plasma containing at least one inert gas while biasing the hydrogen plasma with a RF bias power to direct the hydrogen (H<SUB>2</SUB>) plasma to clean the surface of the silicon wafer.
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| 申请公布号 |
US7169704(B2) |
申请公布日期 |
2007.01.30 |
| 申请号 |
US20020175812 |
申请日期 |
2002.06.21 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KOO KYEONGMO;WON JAIHYUNG;UM HYEONILL;JUNG SUNHYUK;PARK SANGWOOK |
| 分类号 |
H01L21/20;H01L21/44;H01L21/285;H01L21/30;H01L21/306;H01L21/768 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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