| 发明名称 |
Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition |
| 摘要 |
An exemplary embodiment is related to a method of using an adhesion precursor in an integrated circuit fabrication process. The method includes providing a gas of material over a dielectric material and providing a copper layer over an adhesion precursor layer. The adhesion precursor layer is formed by the gas, and the dielectric material includes an aperture.
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| 申请公布号 |
US7169706(B2) |
申请公布日期 |
2007.01.30 |
| 申请号 |
US20030687186 |
申请日期 |
2003.10.16 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LOPATIN SERGEY D.;BESSER PAUL R.;MYERS ALLINE F.;ROMERO JEREMIAS D.;TRAN MINH Q.;YOU LU;WANG PIN-CHIN CONNIE |
| 分类号 |
H01L21/44;H01L21/4763;H01L21/768 |
主分类号 |
H01L21/44 |
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