| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to simplify manufacturing processes and to reduce fabrication costs by forming a predetermined well region without a photoresist ashing process and an SH process. A field oxide layer(203) is formed on a semiconductor substrate(201). A photoresist pattern is formed on the resultant structure by using a PEP(Photo Etching Process). A P type well region(207) is formed by performing a first ion implantation on the resultant structure using the photoresist pattern as an ion implantation mask. A photoresist layer is coated on the entire surface of the resultant structure. An opening portion is formed on the photoresist layer by using exposing and developing processes. An N type well region(211) is formed by performing a second ion implantation on the resultant structure through the opening portion of the photoresist layer. Then, the photoresist layer is stripped off from the resultant structure by using an ashing process and an SH process.</p> |
