| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate for manufacturing an organic semiconductor device by which an organic semiconductor film having a higher orientation order can be formed more easily and efficiently, and also to provide an organic semiconductor device using the same and method for manufacturing the same. SOLUTION: The substrate for manufacturing the organic semiconductor device includes a substrate, a gate electrode formed on the substrate, a gate insulation film formed on the gate electrode, and an organic thin film formed on the gate insulation film. The organic thin film is formed from a solution for forming an organic thin film which contains: a silane-based surfactant expressed by the formula (1) R<SB>n</SB>-Si-X<SB>4-n</SB>(wherein R is 1-20C hydrocarbon or the like which may include a substituent, X is hydroxyl or the like, and n is an integer from 1 to 3); and a catalyst which can interact with the silane-based surfactant. The organic semiconductor device includes the substrate, and a source electrode, a drain electrode, a semiconductor film, and a protection film which are formed on the substrate. The method of manufacturing the organic semiconductor device is also provided. COPYRIGHT: (C)2007,JPO&INPIT
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