| 摘要 |
A semiconductor structure and methods of forming the same are provided. The semiconductor structure includes a semiconductor substrate, a first memory device array on the semiconductor substrate, and a logic circuit on the semiconductor substrate. Substantially all gates of at least one type of PMOS and NMOS devices in the first memory device array and the logic circuit are unidirectional. The pocket regions and lightly doped drain/source regions are therefore tilt implanted at rotation angles substantially close to 0 degrees and 180 degrees.
|
