METHOD FOR FORMING BIT LINE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a bit line of a semiconductor device preventing an increase in bit line resistance due to a barrier metal, and an increase in capacitance. SOLUTION: The method for forming a bit line of a semiconductor device includes steps of: forming a contact hole after forming an interlayer insulating film on the top of a semiconductor substrate on which a predetermined structure is formed; forming a first conductive layer inside the contact hole; forming a barrier metal layer and embedding the contact hole therein after etching the first conductive layer to a predetermined depth; forming a second interlayer insulating film on the entire structure; and embedding a second conductive layer after etching the second interlayer insulating film so that the barrier metal layer is exposed. COPYRIGHT: (C)2007,JPO&INPIT