| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of establishing compatibility between reduction in a short channel effect of a buried gate transistor and an increase in superimposition between the transistor and the gate, and a manufacturing method thereof. <P>SOLUTION: This semiconductor device 202 is provided with concave portions 118 formed in a first region 104, a second region 106 and separation regions 108 respectively; and a dielectric layer 120 for backing the concave portions 118 so as to have a uniform thickness, on a substrate 102. This manufacturing method includes a process of forming the separation regions 108 between the first region 104 and the second region 106 in the substrate 102; a process of forming the concave portions 118 on the substrate surface; and a process of uniformly covering the concave portions 118 with an oxide 120. The method further includes a process of doping a channel region 124 disposed under the bottom surface of each of the concave portions 118, a process of depositing an electrode material 126 on each of the concave portions 118, and a process of forming source/drain regions. <P>COPYRIGHT: (C)2007,JPO&INPIT |
