发明名称 CHEMICAL MECHANICAL POLISHING LIQUID
摘要 <p>A chemical mechanical polishing liquid, comprising at least an abrasive particle, a chemical additive and a carrier material, wherein the chemical additive is polycarboxylic acid or the salt thereof. Said polishing liquid is used to considerably reduce the defective rate, to increase the flatness level of the metal surface, to reduce polishing rate of metal, to optimize the polishing rate of dielectric, and to extend the range of process parameter.</p>
申请公布号 WO2007009365(A1) 申请公布日期 2007.01.25
申请号 WO2006CN01702 申请日期 2006.07.17
申请人 ANJI MICROELECTRONICS (SHANGHAI) CO., LTD;YANG, ANDY, CHUNXIAO;YU, CHRIS, CHANG;SHIAO, DANNY, ZHENGLONG;JING, JUDY, JIANFEN 发明人 YANG, ANDY, CHUNXIAO;YU, CHRIS, CHANG;SHIAO, DANNY, ZHENGLONG;JING, JUDY, JIANFEN
分类号 C09G1/02 主分类号 C09G1/02
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