发明名称 |
Optimized image sensor process and structure to improve blooming |
摘要 |
An image sensor that has a pixel array using an isolation structure between pixels that reduce electrical cross-talk is disclosed. The pixel array is formed on a substrate that has a thin (less than 5 microns) epitaxial layer. The isolation structure uses a deep p-well to surround a shallow trench isolation. The deep p-well is formed using an implant energy of typically over 700 keV.
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申请公布号 |
US2007018264(A1) |
申请公布日期 |
2007.01.25 |
申请号 |
US20050210996 |
申请日期 |
2005.08.24 |
申请人 |
OMNIVISION TECHNOLOGIES, INC. |
发明人 |
RHODES HOWARD E.;NOZAKI HIDETOSHI;MANABE SOHEI;TAI HSIN-CHIH;NAGARAJA SATYADEV H.;SHAH ASHISH A.;QIAN WILLIAM;YANG HONGLI;DAI TIEJUN |
分类号 |
H01L31/0232 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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