发明名称 SEMICONDUCTOR MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To reduce a field concentration between wiring caused by microfabrication, and to improve reliability. <P>SOLUTION: Bit lines BL 1e, BL 1o, BL 2e, and BL 2o on a wiring layer M1 are arranged with minimum widths and spaces in a chip. Potential difference V1 at the maximum is given between the bit lines. A minimum space is a value which assures that no wiring short circuit may be caused by dielectric breakdown when the potential difference V1 is given between the bit lines. This value may be a minimum processing dimension available in a design rule or lithography. Although potential difference V2 (>V1) is given between shield supply lines BLSHIELD and the bit lines on the wiring layer M1, the shield supply lines BLSHIELD on the wiring layer M1 are sufficiently separated from a region where the bit lines are arranged at minimum spaces. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007019552(A) 申请公布日期 2007.01.25
申请号 JP20060276989 申请日期 2006.10.10
申请人 TOSHIBA CORP 发明人 HOSONO KOJI;NAKAMURA HIROSHI;IMAMIYA KENICHI
分类号 H01L27/10;H01L21/8246;H01L27/112 主分类号 H01L27/10
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