| 摘要 |
<P>PROBLEM TO BE SOLVED: To form metallic compound films which differ in film thickness at low cost without causing yield deterioration. <P>SOLUTION: The manufacturing method for a semiconductor device comprises processes of: defining the surface of a substrate 10 sandwiched by element separation insulating films while being measured in the first direction as a first element region and a second element region having mutually different width, by embedding two or more stripe-shaped element separation insulating films into the substrate 10, so that the topmost part may become higher than the surface of the substrate 10; forming gate electrodes 151 and 15x so as to extend along the first direction; forming source regions 131 and 13x and drain regions 141 and 14x, while sandwiching gate electrodes 151 and 15x in a direction which intersects perpendicularly with the first direction in the first and second element regions; depositing a metal film from an inclined direction to the substrate 10 surface in a plane parallel to the first direction; and forming metallic compound films 171, 17x, 181 and 18x by heat processing. <P>COPYRIGHT: (C)2007,JPO&INPIT |
