| 摘要 |
PROBLEM TO BE SOLVED: To allow a film forming process with a wafer of small size using a reactor of large size, at a high throughput, efficiently and evenly. SOLUTION: A plurality of wafers W of small size are sucked/held by a holding means 70 of a CVD device 1 for large size. In this held state, the plurality of the wafers W are film-formed at once in a reactor 80 for large size. The wafers W are temporarily taken out of the reactor 80 in the middle of film forming, and after orientation of the wafers W are changed by an orientation changing means 40, they are returned to the reactor 80 for resuming the film forming process. COPYRIGHT: (C)2007,JPO&INPIT
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