SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

摘要

A semiconductor device and a forming method thereof are provided to optimize an integration degree and to perform a variety of functions by using a versatile insulating layer interposed between an active pattern and a substrate. A dielectric layer(120a,120b,120c) and an active pattern are sequentially formed on a substrate(100). A gate electrode is formed on the resultant structure in order to cross over the active pattern. A gate insulating layer is interposed between the gate electrode and the active pattern. Pair of doped regions are formed at both sides of the gate electrode in the active pattern. A channel region is defined under the gate electrode due to the pair of doped regions. Lower surfaces of the doped regions contact an upper surface of the dielectric film.