发明名称 |
GROUP III-NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD THEREOF, AND GROUP III-NITRIDE SEMICONDUCTOR DEVICE |
摘要 |
Disclosed is a method for producing a group III nitride semiconductor crystal wherein an alloy (11) containing at least a group III metal element and an alkali metal element is put in a reaction container (1) and a nitrogen-containing substance (14) is introduced into the reaction container (1), so that the nitrogen- containing substance (14) is dissolved in an alloy melt (13) of the molten alloy (11) and there is grown a group III nitride semiconductor crystal (15). By this method, there can be efficiently obtained a group III nitride semiconductor crystal (15) having a low light absorption coefficient. Also disclosed is a group III nitride semiconductor device having a high luminous intensity. � KIPO & WIPO 2007 |
申请公布号 |
KR20070011476(A) |
申请公布日期 |
2007.01.24 |
申请号 |
KR20067023581 |
申请日期 |
2005.03.30 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;MORI YUSUKE |
发明人 |
SASAKI TAKATOMO;MORI YUSUKE;YOSHIMURA MASASHI;KAWAMURA FUMIO;NAKAHATA SEIJI;HIROTA RYU |
分类号 |
H01L21/318;C30B9/12;C30B11/00;C30B11/06;C30B29/38;C30B29/40;H01L21/20;H01L21/208;H01L33/00;H01S5/323 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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