发明名称 |
Multi-sensing level MRAM structures |
摘要 |
The present disclosure provides an improved magnetic memory cell. The magnetic memory cell includes a switching element and two magnetic tunnel junction (MTJ) devices. A conductor connects the first and second MTJ devices in a parallel configuration, and serially connecting the parallel configuration to an electrode of the switching element. The resistance of the first MTJ device is different from the resistance of the second.
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申请公布号 |
US7166881(B2) |
申请公布日期 |
2007.01.23 |
申请号 |
US20030685824 |
申请日期 |
2003.10.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN WEN CHIN;TANG DENNY D.;HUNG CHIEN-CHUNG |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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