发明名称 RFID DEVICE HAVING NON-VOLATILE FERRO-ELECTRIC MEMORY DEVICE
摘要 An RFID(Radio Frequency IDentification) device including a non-volatile ferroelectric memory device is provided to minimize power consumption by applying high voltage to only the memory cell array in the memory of the RFID device and supplying low voltage to a neighboring area. An antenna(100) transceives an RF signal with an external communication device. An analog block(200) generates power voltage by using the RF signal received through the antenna. A digital block(300) transmits a response signal to the analog block and outputs a memory control signal by receiving the power voltage from the analog block. The memory(400) includes a high voltage generator for generating the high voltage by using the power voltage, reads/writes data by the memory control signal, operates the memory cell area by using the high voltage, and operates the neighboring area by using the low voltage. The memory includes a high voltage control block, a memory cell block, a control block, and an I/O(Input/Output) block.
申请公布号 KR100673131(B1) 申请公布日期 2007.01.22
申请号 KR20050120633 申请日期 2005.12.09
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG, HEE BOK;AHN, JIN HONG
分类号 G06K19/077;G06K17/00;G06K19/07 主分类号 G06K19/077
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