Programming method for reducing excessive current in flash memory device,申请号KR20050016435-传众专利搜索

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发明名称	Programming method for reducing excessive current in flash memory device
摘要
申请公布号	KR100672117(B1)	申请公布日期	2007.01.19
申请号	KR20050016435	申请日期	2005.02.28
申请人		发明人
分类号	G11C16/10;G11C16/24	主分类号	G11C16/10
代理机构		代理人
主权项
地址

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