THIN FLIM TRANSISTOR AND ORGANIC LIGHT EMISSION DISPLAY

摘要

A semiconductor device is provided to avoid a variation of a voltage accidentally applied from the outside to a substrate or a variation of a threshold voltage of a thin film transistor capable of being generated by static electricity by forming a metal interconnection on a ground part exposing a partial region of a conductive substrate. At least one thin film transistor is formed on a conductive substrate(300). At least one insulation layer is formed on the conductive substrate. A ground part grounds the conductive substrate, formed in at least one region of the conductive substrate. An insulation layer is formed on the lower surface of the conductive substrate. The ground part can be formed by removing at least a partial region of at least one of the insulation layers formed on the substrate.