| 摘要 |
PROBLEM TO BE SOLVED: To provide a rare earth metal component used in a semiconductor manufacturing device and a flat panel display manufacturing device, having sufficient corrosion resistance (resistance to plasma) to halogen corrosive gas or its plasma, capable of suppressing occurrence of particle, and provided with high electric conductivity. SOLUTION: This rare earth metal component has a spiral channel conforming to ISO specifications or unify specifications or inch specifications. Rare earth metal elements selected from among Y, Sc, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu are preferable and rare earth metal elements selected from among Y, Sc, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu are more preferable as the rare earth metal elements used in this component. These rare earth metal elements can be used singly as one kind or by combining two kinds of them or more. COPYRIGHT: (C)2007,JPO&INPIT
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