| 摘要 |
Provided is a CMOS image sensor and a manufacturing method thereof. The CMOS image sensor includes a gate electrode, a photodiode, a transistor region, and a light blocking material. The gate electrode is formed on a semiconductor substrate with an intervening gate insulating layer. The photodiode region is formed on one side of the gate electrode. The transistor region is formed on another side of the gate electrode. The light blocking material is formed on the transistor region to block light from reaching the transistor region.
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