A method of programming a memory cell (210) in a non-volatile memory device (100) includes applying a first voltage to a control gate (1210) associated with the memory cell and applying a second voltage to a drain region (1230) associated with the memory cell. The method also includes applying a positive bias to a source region (1220) associated with the memory cell and/or applying a negative bias to a substrate region (1240) associated with the memory cell (210).
