| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power semiconductor device, which keeps a low on-voltage and having proper switching characteristics. <P>SOLUTION: A power semiconductor device includes a plurality of trenches 4, which is installed in a first base layer 1 of a first conductive type having an interval, in such a way to divide a main cell MR and dummy cell DR at a position separated from a collector layer 3 of a second conductive type. In the main cell, a second base layer 7 of the second conduction type and emitter layer 8 of the first conductive type are installed, and in the dummy cell, a buffer layer 9 of the second conductive type is installed. A gate electrode 6 is installed in the trench, adjoining the main cell via a gate insulation film 5. Between the buffer layer and the emitter electrode, a buffer resistor 14 is inserted, and its resistance value is set smaller than that, which increases the voltage between the gate and emitter by the negative capacitance of the gate during a period of charging between the gate and collector by the voltage applied between the gate and emitter, when turning on the device. <P>COPYRIGHT: (C)2007,JPO&INPIT |
