FIN FET CMOS, METHOD OF MANUFACTURING THE SAME, AND MEMORY DEVICE COMPRISING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a Fin FET CMOS, a method of manufacturing the same, and a memory device comprising the same.

SOLUTION: The Fin FET CMOS comprises an n-type transistor provided on a substrate, an interlayer insulating layer stacked on the n-type transistor, and a p-type transistor provided on the interlayer insulating layer. The n-type and p-type transistors have a common gate insulating film and a common fin gate.

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