OXIDE NITRIDE FILM SILICON MANUFACTURING APPARATUS USING VERTICAL LPCVD METHOD AND METHOD THEREOF

摘要

The apparatus comprises of a flow controller (1) to control flow rates of N2SiH2Cl2, N2O and NH3 gases; a flow meter (2) to indicate flow rates of gases; a vertical reactor (3) for semiconductor wafer deposition; a filter (4) to filter particles and impurities; a pressure controller (5) to control the internal pressure of the reactor; a plurality of valves (6-10); a pressure meter (11) to indicate the reactor pressure; a pressure switch (12) which automatically closes at a pressure higher than the predetermined pressure of the reacotr; and pumps (13,14) to maintain or reduce reactor pressure. The temperature and pressure for the deposition process are 750-850 deg.C and 0.1-0.5 torr, respectively.