| 摘要 |
PROBLEM TO BE SOLVED: To provide a high quality bismuth-substituted magnetic garnet film which is grown by a liquid phase epitaxial growth method, and a method for producing the bismuth-substituted magnetic garnet film by using a non-magnetic garnet substrate in which the microcracks caused on the bevel surface of a non-magnetic garnet single crystal wafer are removed. SOLUTION: In the method for producing the bismuth-substituted magnetic garnet film by the liquid phase epitaxial growth method using a non-magnetic garnet single crystal substrate, the non-magnetic garnet single crystal substrate is characterized in that the difference between the maximum value and the minimum value of lattice constants is within 0.01Å. The YbTbBiFe-based bismuth-substituted magnetic garnet film obtained by the production method is also provided. COPYRIGHT: (C)2007,JPO&INPIT |
