| 摘要 |
PROBLEM TO BE SOLVED: To provide a high purity hexagonal boron nitride single crystal (hBN) excellent in far-ultraviolet light emitting characteristics, which is prepared by treating at a high temperature and high pressure in the presence of a high purity solvent, and in which weak points of a conventional crystal such as the weakness to mechanical vibration and stimulation, poor retention of a single crystal form, a considerable variation in the light emitting performance and a considerable deviation from a preset wavelength are resolved. SOLUTION: The single crystal obtained by the above solvent refining method is ground into a powder and applied on a light emitting surface. Thereby, the weak points of the conventional single crystal such as the weakness to the vibration and the poor retention of the crystal form are overcome, so that the far-ultraviolet light emitting device crystal powder being free from the variation in the light emitting performance and exhibiting the stable light emitting performance can be prepared. COPYRIGHT: (C)2007,JPO&INPIT
|
