| 摘要 |
PROBLEM TO BE SOLVED: To achieve a long-life nitride semiconductor laser element capable of preventing voltage characteristics from deteriorating even when driven with high-current density. SOLUTION: The nitride semiconductor laser element is provided with a p-type nitride semiconductor and a p-side electrode formed on the p-type nitride semiconductor. The p-side electrode has a first layer directly contacting with the p-type nitride semiconductor and a second layer formed on the first layer and having conductivity. The second layer includes a metal element selected from among a group composed of Ti, Zr, Hf, W, Mo, and Nb and an oxygen element. COPYRIGHT: (C)2007,JPO&INPIT
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