| 发明名称 |
Nonvolatile memory device including circuit formed of thin film transistors |
| 摘要 |
A transistor is arranged for electrically isolating a sense amplifier formed of a thin film transistor from a data line electrically coupled to the sense amplifier. When a write driver drives the data line, a control signal is applied to isolate the data line from the sense amplifier.
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| 申请公布号 |
US2007014162(A1) |
申请公布日期 |
2007.01.18 |
| 申请号 |
US20060482019 |
申请日期 |
2006.07.07 |
| 申请人 |
|
发明人 |
OGURA TAKU;YAMAUCHI TADAAKI;KUBO TAKASHI |
| 分类号 |
G11C16/04;G11C16/06;G11C7/02;G11C7/06;G11C11/14;G11C11/34;G11C16/12;G11C16/34;G11C29/00;G11C29/04 |
主分类号 |
G11C16/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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