LAMINATE, BONDED SEMICONDUCTOR EPITAXIAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND THEIR MANUFACTURING METHODS

摘要

PROBLEM TO BE SOLVED: To join a semiconductor epitaxial substrate with a resticking substrate (base body) without mechanically deforming the semiconductor epitaxial substrate.

SOLUTION: In the case of manufacturing a semiconductor device such as a light emitting diode and a bonded semiconductor epitaxial substrate or the like used for the semiconductor device by joining the semiconductor epitaxial substrate 20 with a base body, the base body is formed as a multilayer substrate by laminating at least two sorts of materials (e.g. silicon substrate 12 and aluminium film 11) having different thermal expansion coefficients. In the case of joining the semiconductor epitaxial substrate 20 and the multilayer substrate with each other, these substrates are held at a suitable temperature to warp the multilayer substrate equivalently to the semiconductor epitaxial substrate 20, and to join the semiconductor epitaxial substrate 20 with the base body.

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