| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent overprogramming and to shorten programming time by selectively adjusting the time for supplying a word line bias voltage based on program cycles being in progress in a program control circuit and method for multi-level cells. <P>SOLUTION: The program control circuit of the flash memory device is configured by including a voltage selection circuit for outputting a program bias voltage generated by a word line voltage generator to an X-decoder connected to a word line between one of first to third clock signals and one of first to third set time or a verify bias voltage generated by the word line voltage generator to the X-decoder during fourth set time in response to one of first to third cycle control signals. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
