COMPOSITION FOR FORMING ETCHING STOPPER LAYER

摘要

PROBLEM TO BE SOLVED: To provide a composition for forming an etching stopper layer reconciled in both dry etching selectivity and low permittivity, and to provide a method of manufacturing a semiconductor device using the composition. SOLUTION: In the composition for forming the etching stopper layer containing a silicon-containing polymer, the silicon-containing polymer contained in the composition contains a disilylbenzene structure. In the method of manufacturing the semiconductor device, the etching stopper layer is formed by using the composition. COPYRIGHT: (C)2007,JPO&INPIT