METHOD FOR FORMING GROUP III NITRIDE FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a group III nitride film without using an SiO2mask. SOLUTION: The first group III nitride film 53 is hetero-epitaxially grown on the main surface 51a of a substrate 51 by supplying a deposition gas G8 into an organometallic gas phase growth furnace 17. A plurality of droplets are formed by conducting a heat treatment of the first group III nitride film 53. Successively the second group III nitride 59 is deposited on the first group III nitride film 53c(53e). When a nitrogen-containing gas is supplied after the droplets were formed, a compound of nitrogen and an element that constitutes the droplet is formed. The second group III nitride 59 is deposited on the heat treated first group III nitride and on the formed compound. The second group III nitride 59 comprises areas having a lower dislocation density than that of the first group III nitride. COPYRIGHT: (C)2007,JPO&INPIT