发明名称 Semiconductor device and MIM capacitor
摘要 An MIM capacitor comprises first and second conductor patterns embedded in a first interlayer insulation film so as to extend continuously in a mutually opposing relationship and forming a part of a comb-shaped capacitor pattern, and third and fourth conductor patterns formed in a second interlayer insulation film separated from the first interlayer insulation film by a via-insulation film, such that the third and fourth conductor patterns extend in the second layer interlayer insulation film continuously in a mutually opposing relationship as a part of the comb-shaped capacitor pattern, wherein there is formed a fifth conductor pattern extending in the via-insulation film continuously in correspondence to the first and third conductor patterns so as to connect the first and third conductor patterns continuously, and wherein there is formed a sixth conductor pattern extending in the via-insulation film continuously in correspondence to the second and fourth conductor patterns so as to connect the second and fourth conductor patterns continuously.
申请公布号 US2007013029(A1) 申请公布日期 2007.01.18
申请号 US20060522410 申请日期 2006.09.18
申请人 FUJITSU LIMITED 发明人 IIOKA OSAMU;FUKUOKA IKUTO
分类号 H01L29/00 主分类号 H01L29/00
代理机构 代理人
主权项
地址