发明名称 |
Vertical channel semiconductor devices and methods of manufacturing the same |
摘要 |
Vertical channel semiconductor devices include a semiconductor substrate with a pillar having an upper surface. An insulated gate electrode is around a periphery of the pillar. The insulated gate electrode has an upper surface at a vertical level lower than the upper surface of the pillar to vertically space apart the insulated gate electrode from the upper surface of the pillar. A first source/drain region is in the substrate adjacent the pillar. A second source/drain region is disposed in an upper region of the pillar including the upper surface of the pillar. A contact pad contacts the entire upper surface of the pillar to electrically connect to the second source/drain region.
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申请公布号 |
US2007012996(A1) |
申请公布日期 |
2007.01.18 |
申请号 |
US20060448437 |
申请日期 |
2006.06.07 |
申请人 |
YOON JAE-MAN;PARK DONG-GUN;LEE CHOONG-HO;KIM SEONG-GOO;LEE WON-SOK;PARK SEUNG-BAE |
发明人 |
YOON JAE-MAN;PARK DONG-GUN;LEE CHOONG-HO;KIM SEONG-GOO;LEE WON-SOK;PARK SEUNG-BAE |
分类号 |
H01L31/00;H01L29/76;H01L29/94 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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