发明名称 Semiconductor device including memory cells and current limiter
摘要 A memory cell array, such as an EEPROM flash memory array, includes a current limiting circuit that limits a sum of leakage currents from nonselected memory cells during operation of the array, such as during a programming operation.
申请公布号 US2007014157(A1) 申请公布日期 2007.01.18
申请号 US20050181983 申请日期 2005.07.15
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 HUNG CHUN-HSIUNG;YU CHUAN-YING;CHEN HAN-SUNG;KUO NAI-PING;LIN CHING-CHUNG;CHANG KUEN-LONG
分类号 G11C16/04;G11C11/34 主分类号 G11C16/04
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