发明名称 |
Semiconductor device including memory cells and current limiter |
摘要 |
A memory cell array, such as an EEPROM flash memory array, includes a current limiting circuit that limits a sum of leakage currents from nonselected memory cells during operation of the array, such as during a programming operation.
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申请公布号 |
US2007014157(A1) |
申请公布日期 |
2007.01.18 |
申请号 |
US20050181983 |
申请日期 |
2005.07.15 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HUNG CHUN-HSIUNG;YU CHUAN-YING;CHEN HAN-SUNG;KUO NAI-PING;LIN CHING-CHUNG;CHANG KUEN-LONG |
分类号 |
G11C16/04;G11C11/34 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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