FIELD EFFECT TRANSISTOR

摘要

A field effect transistor (HEMT) using a two-dimensional electron gas is provided with a semiconductor substrate (1) which includes an electron transit layer (8) and an n-type electron supplying layer (9). On one main plane of the semiconductor substrate (1), a source electrode (3), a drain electrode (4) and a gate electrode (5) are formed. The gate electrode (5) is arranged between the source electrode (3) and the drain electrode (4). On the one main plane (12) of the semiconductor substrate (1), a p-type organic semiconductor film (6) is arranged. The p-type organic semiconductor film (6) reduces current collapse.