| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device and method of manufacturing the same capable of improving the characteristics of a semiconductor storage device. <P>SOLUTION: The method of manufacturing a semiconductor storage device 100 includes (a) a step for forming a high melting point metal layer 22 on a base 10, (b) a step for forming an antioxidant film 24 on the upper of the high melting point metal layer, (c) a step for forming an insulating layer 62 above the antioxidant film, and (d) a step for forming a storage cell 50 above the insulating layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
