Solid-state imaging device

摘要

A solid-state imaging device comprises: a semiconductor substrate; and a plurality of photodiodes arranged in a surface of the semiconductor substrate, each of the photodiodes having a predetermined shape and being divided into: a first split pixel occupying a central region of a photo acceptance surface of each of the photodiodes; and a second split pixel occupying a peripheral region of each of the photodiodes except the first split pixel, wherein a transfer gate for the first split pixel and a transfer gate for the second split pixel in each of the photodiodes are provided in opposite positions of each of the photodiodes.