WIRE AND METHOD FOR FABRICATING INTERCONNECTION LINE AND THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME

摘要

A line structure, a line forming method, a thin film transistor substrate, and a manufacturing method thereof are provided to obtain a copper line structure with an improved adhesive force and a good profile by providing a barrier layer including copper nitride formed on a lower structure and a copper conductive layer including copper or copper alloy formed on the barrier layer. A barrier layer(2a) including copper nitride is formed on a lower structure(1). A copper conductive layer including copper or copper alloy is formed on the barrier layer. Copper nitride is consecutively or non-consecutively placed on an interface between the lower structure and the barrier layer. A thickness of the barrier layer ranges from 50 to 1000 . The barrier layer includes nitride ranging from 0.001 to 50at%. A capping layer(2c) including molybdenum and molybdenum allow is formed on the copper conductive layer.