| 摘要 |
PROBLEM TO BE SOLVED: To suppress the occurrence of defects in a protection film formed in an etched portion as well as to attain a high etch rate. SOLUTION: The etching method includes a first process wherein an etching gas 1 is supplied into a treatment chamber 5, and a work piece 12 located inside the treatment chamber is plasma-etched; a second process wherein a passivation gas 2 is supplied into the treatment chamber, and a passivation layer is formed on the etched portion of the work piece; and a third process of shutting out both the etching gas and the passivation gas. From the first through the third process, a purge gas is always supplied. The first to third processes are repeated by turns. COPYRIGHT: (C)2007,JPO&INPIT
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