| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for controlling distortion of a single crystal epitaxial oxide. SOLUTION: The method for controlling distortion of the single crystal epitaxial oxide includes: a step for preparing a silicon substrate; a step for forming a silicon alloy layer selected from a group of silicon alloy layers consisting of Si<SB>1-x</SB>Ge<SB>x</SB>and Si<SB>1-y</SB>C<SB>y</SB>; a step for adjusting lattice constant of the silicon alloy layer by selecting content of an alloy material to select a form of distortion of the silicon alloy layer and adjust it; a step for depositing a single crystal epitaxial oxide film selected from a group of oxide films consisting of a perovskite type manganese oxide, a single crystal rare earth oxide, a perovskite type oxide including no manganese, a bivalent rare earth oxide, and a trivalent rare earth oxide on the silicon alloy layer in an atomic layer deposition method; and a step for bringing a desired device to completion. COPYRIGHT: (C)2007,JPO&INPIT
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