THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an organic thin film transistor which has stably realized high mobility with smooth transfer of charges among a source electrode, a drain electrode, and a channel on the gate insulating layer. SOLUTION: A gate electrode 11 is provided on a substrate 10. A gate insulating layer 12 is provided on the gate electrode 11. An organic electronic material layer 13 is provided on the gate insulating layer 12. A spacer 30 is provided to a gap region between the regions for providing the source electrode and drain electrode on the organic electronic material layer 13. The organic electronic material layer 13 in the region where the source electrode and/or drain electrode is provided is removed up to the predetermined depth. A source electrode 15 and a drain electrode 14 are provided to the region to provide the source electrode and drain electrode on the gate insulating layer 12 and/or organic electronic material layer 13. COPYRIGHT: (C)2007,JPO&INPIT