发明名称 POROUS SILICON NITRIDE ARTICLE AND METHOD FOR PRODUCTION THEREOF
摘要 A silicon nitride porous body which is obtained by nitriding a molded body having metallic silicon as a main component and by performing a high temperature heating treatment at a temperature higher than the nitriding temperature, and which has a porous structure with an average pore diameter of 3 mu m or above, and contains at least one kind of element selected from the group consisting of the groups 2A, 3A, 3B inclusive of lanthanoid elements, and 4B. The silicon nitride porous body has a porous structure with a large average pore diameter, a test specimen cut out from the porous body exhibiting a high thermal conductivity and a small thermal expansion coefficient, and can be suitably used in a component for purifying gas and/or solution such as a ceramic filter.
申请公布号 EP1298110(A4) 申请公布日期 2007.01.17
申请号 EP20020705468 申请日期 2002.03.25
申请人 NGK INSULATORS, LTD. 发明人 INOUE, KATSUHIRO;MORIMOTO, KENJI;MASUDA, MASAAKI;KAWASAKI, SHINJI;SAKAI, HIROAKI
分类号 B01D39/20;B01D53/22;B01D53/86;B01D53/94;B01D71/02;B01J27/24;B01J32/00;B01J35/04;C04B35/584;C04B35/591;C04B38/00;(IPC1-7):C04B38/00 主分类号 B01D39/20
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