LIGHT EMITTING DIODE AND FABRICATION METHOD OF THE SAME

摘要

An LED is provided to increase inner light emitting efficiency by enlarging the slope angle of an active layer, and to increase light reflection efficiency of a reflection electrode formed on a p-GaN layer by making the p-GaN layer have a smaller slope angle than that of the active layer. An n-GaN layer(20) having a plurality of protrusions(22) is formed on a substrate(10), having an uneven surface caused by the protrusions so that the lateral surface(22a) of the protrusion is tilted with respect to the upper surface of the substrate by a first slope angle alpha(35 degrees<=alpha<=90 degrees). An active layer(30) is formed on the n-GaN layer along the outline of the n-GaN layer, having a slope surface(30a) on the lateral surface of the protrusion such that the slope surface is tilted with respect to the upper surface of the substrate by a second slope angle beta(35 degrees<=beta<=alpha). A p-GaN layer(40) is formed on the active layer along the outline of the active layer, having a slope surface(40a) on the slope surface of the active layer such that the slope surface is tilted with respect to the slope surface of the active surface by a third slope angle gamma(20 degrees<=gamma<=beta). The slope surface of the p-GaN layer doesn't run in parallel with the slope surface of the active layer and the lateral surface of the protrusion. A p-electrode(50) is formed on the p-GaN layer, made of a metal with high reflectivity. An n-electrode(60) is formed on a predetermined region of the n-GaN layer, corresponding to the p-electrode.