| 摘要 |
A method for forming silicide of a CMOS image sensor is provided to minimize damage of an active region while guaranteeing a margin of an LDD region by prevent a gate from being reduced in width in a process for removing a hard mask when silicide is formed on a gate electrode. A gate pattern is formed on a silicon substrate(100), including a structure in which a gate oxide layer, a gate electrode(110) and a hard mask are sequentially stacked. The hard mask is made of nitride. Spacers(140) are formed on the sidewalls of the gate pattern. A barrier layer is deposited on the resultant structure by using an oxide layer. A photoresist layer pattern is formed on the barrier layer, corresponding to the gate pattern and opening a predetermined region having a smaller width than that of the gate pattern. By using the photoresist layer pattern as an etch mask, a part of the barrier layer is removed to expose a part of the hard mask. The photoresist layer pattern is eliminated. The exposed hard mask is eliminated by a wet etch process. The residual barrier layer is removed. A silicide blocking layer(160) is formed on a region of the resultant structure except a silicide formation region. A silicidation process is performed on the resultant structure to form a silicide layer(170).
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