发明名称 |
Method of fabricating a lateral double-diffused mosfet (LDMOS) transistor and a conventional CMOS transistor |
摘要 |
A method of fabricating an LDMOS transistor and a conventional CMOS transistor together on a substrate. A P-body is implanted into a source region of the LDMOS transistor. A gate oxide for the conventional CMOS transistor is formed after implanting the P-body into the source region of the LDMOS transistor. A fixed thermal cycle associated with forming the gate oxide of the conventional CMOS transistor is not substantially affected by the implanting of the P-body into the source region of the LDMOS transistor.
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申请公布号 |
US7163856(B2) |
申请公布日期 |
2007.01.16 |
申请号 |
US20030714271 |
申请日期 |
2003.11.13 |
申请人 |
VOLTERRA SEMICONDUCTOR CORPORATION |
发明人 |
YOU BUDONG;ZUNIGA MARCO A. |
分类号 |
H01L21/8238;H01L21/336;H01L21/425;H01L21/8234;H01L21/8249;H01L27/06;H01L27/092;H01L29/08;H01L29/78 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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