SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME

摘要

A semiconductor device and its forming method are provided to reduce remarkably the size of the semiconductor device by using a floating junction between a self aligned select element and a memory element. A semiconductor device includes a nonvolatile memory device(140) on a substrate(100), a first select device(142) at one side of the nonvolatile memory element on the substrate, and a floating junction. The floating junction(128) is formed between the nonvolatile memory device and the first select device in the substrate. The gate of the first select device is made of one conductive layer. The nonvolatile memory device is composed of a floating gate, a control gate and an insulating layer between the floating gate and the control gate.