发明名称 |
Method for manufacturing semiconductor devices |
摘要 |
A semiconductor device manufacturing method is provided including: forming a first impurity layer that becomes first wells in a high breakdown voltage transistor forming region in a semiconductor layer; forming a second impurity layer that becomes offset regions in the high breakdown voltage transistor forming region; forming the first wells and the offset regions by diffusing impurities of the first and second impurity layers by heat treating the semiconductor layer; forming element isolation regions by a trench element isolation method in the semiconductor layer, after forming the first wells and the offset regions; forming first gate dielectric layers in the high breakdown voltage transistor forming region; forming second wells in a low voltage driving transistor forming region in the semiconductor layer; forming second gate dielectric layers in the low voltage driving transistor forming region; and forming gate electrodes in the high breakdown voltage transistor forming region and the low voltage driving transistor forming region.
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申请公布号 |
US7163855(B2) |
申请公布日期 |
2007.01.16 |
申请号 |
US20040902699 |
申请日期 |
2004.07.29 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
NODA TAKAFUMI;HAYASHI MASAHIRO;EBINA AKIHIKO;TSUYUKI MASAHIKO |
分类号 |
H01L21/336;H01L21/76;H01L21/8234;H01L21/8238;H01L27/08;H01L27/088;H01L27/092 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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