THE METHOD OF FABRICATING METAL-LINE IMPROVED RC DELAY IN SEMICONDUCTOR DEVICE,申请号KR20000044755-传众专利搜索

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发明名称	THE METHOD OF FABRICATING METAL-LINE IMPROVED RC DELAY IN SEMICONDUCTOR DEVICE
摘要
申请公布号	KR100668810(B1)	申请公布日期	2007.01.16
申请号	KR20000044755	申请日期	2000.08.02
申请人		发明人
分类号	H01L21/28	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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