| 发明名称 |
High density DRAM with reduced peripheral device area and method of manufacture |
| 摘要 |
A dynamic random access memory (DRAM) structure having a distance less than 0.14 um between the contacts to silicon and the gate conductor is disclosed. In addition a method for forming the structure is disclosed, which includes forming the DRAM array contacts and the contacts to silicon simultaneously.
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| 申请公布号 |
US7163891(B2) |
申请公布日期 |
2007.01.16 |
| 申请号 |
US20040003592 |
申请日期 |
2004.12.03 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
MALDEI MICHAEL;COUSINEAU BRIAN;GERSTMEIER GUENTER;BERRY, II JON S.;BAKER STEVEN M.;LEE JINHWAN |
| 分类号 |
H01L21/768;H01L21/336;H01L21/82;H01L21/8234;H01L21/8242;H01L27/10;H01L29/40;H01L29/739;H01L29/76;H01L29/78 |
主分类号 |
H01L21/768 |
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